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HI9P303-5 Suppliers,Datasheet of HI9P303-5

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NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN 5. Fluence = 1E5 ions/cm2 (typical), T = 250C. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
HI9P303-5 Datasheet


DESCRIPTION This application specific MOSFET is the lastestgeneration of STMicroelectronics unique"STripFET'M" technology. The resulting transistoris optimized for low on-resistance and minimalgate charge. The Chip-scaled PowerFLATTM pack-age allows a significant board space saving, stillboosting the performance.
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Up to six l/Os are possible in this mode. Dedicated inputs or outputscan be implemented as subsets of the l/0 function. The two outermost macrocells (pins 18 & 26) do not have input capability. De-signs requiring eight l/Os can be implemented in the Registeredmode.
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If lC output pulse is operated at maximum duty when the power is turned on, a rush current flows to the outputtransistor, ThereforeF the duty cycle should be slowly increased from O (this is generally referred to as a "softstart't). As shown in figure 3, configuration with the addition of a decay time constant circuit is possible using acondenser connected to the dead-time control pin (1 pin).
HI9P303-5 Pdf

LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS TEST AND APPLICATION INFORMATION PACKAGE OUTLINE SOLDERING Introduction to soldering surface mountpackagesReflow solderingWave solderingManual solderingSuitability of surface mount lC packages forwave and reflow soldering methodsDATA SHEET STATUS DEFINITIONS DISCLAIMERS PURCHASE OF PHILIPS I2C COMPONENTS

Note l: Devices are 100% production tested at TA = +250C and are guaranteed by design from TA = TMllxl to TMAX by correlation to sample units characterized over temperature.
HI9P303-5 Suppliers, HI9P303-5 Datasheet, HI9P303-5 on stock, HI9P303-5 price
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